Field-effect Carrier Doping to Organic Molecular Crystals
نویسندگان
چکیده
منابع مشابه
Organic field-effect transistors using single crystals.
Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucida...
متن کاملContactless charge carrier mobility measurement in organic field-effect transistors
With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively gen...
متن کاملX-ray Irradiation-induced Carrier Doping in Organic Mott Insulators
X-ray irradiation usually induces disorders in a crystal, for example, displacement of the atomic position. In the case of molecular materials, the irradiation produces the molecular defects, which are radiolysed by ionizing radiation. This kind of molecular defect permanently remains, while the irradiation damage in inorganic materials in general is only due to atomic displacements which can b...
متن کاملDoping-induced realignment of molecular levels at organic–organic heterojunctions
This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic–organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 2011
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.32.27